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INTEGRATED CIRCUITS
SA1920 Dual-band RF front-end
Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02
Philips Semiconductors
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
DESCRIPTION
The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process--QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of -5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm. The high-band contains a receiver front-end, doubler and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 4.2 dB at 1960 MHz with a power gain of 23.5 dB and an IIP3 of -12.5 dB.
FEATURES
* Low current consumption * Outstanding low- and high-band noise figure * Excellent gain stability versus temperature and supply * Image reject high-band mixer with over 30 dB of rejection * Increased low-band LNA gain compression during analog * LO input and output buffers * Frequency doubler * On chip logic for network selection and power down * Very small outline package
APPLICATIONS
transmission
* 800 to 1000 MHz analog and digital receivers * 1800 to 2000 MHz digital receivers * Portable radios * Digital mobile communications equipment
PIN CONFIGURATION
HIGH BAND LO B HIGH BAND LO A LOW BAND LO A LOW BAND LO A HIGH BAND IF B HIGH BAND IF A LOW BAND IF B LOW BAND IF A
SYN ON 14
Rx ON
24
23
22
21
20
19
18
17
16
15
13 12 11 10 9 8 7 6 5 4 3 2 1 N/C GND Tx B Tx A GND V CC GND MIX IN GND Tx IF B Tx IF A N/C
V CC Tx ON V CC HIGH BAND IMAGE SET I GND HIGH BAND LO INPUT LOW BAND LO INPUT GND HIGH BAND IMAGE SET Q GND X2 ON N/C
25 26 27 28 29 30 31 32 33 34 35 36 37 N/C 38 STRONG SIGNAL 39 GND 40 CC 41 GND 42 HIGH BAND LNA IN 43 LOW BAND LNA IN 44 GND 45 LOW BAND LNA OUT 46 GND 47 GND 48 N/C
V
HI/LO
GND
SR01435
Figure 1.
Pin Configuration
ORDERING INFORMATION
TYPE NUMBER SA1920 1999 Mar 02 NAME LQFP48 PACKAGE DESCRIPTION Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm 2 VERSION SOT313-2 853-2057 20918
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
PIN DESCRIPTIONS
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 PIN NAME N/C Tx IF A Tx IF B GND MIX IN GND VCC GND Tx A Tx B GND N/C HI/LO SYN ON HIGH BAND IF A HIGH BAND IF B LOW BAND IF A LOW BAND IF B GND HIGH BAND LO A HIGH BAND LO B LOW BAND LO A LOW BAND LO B Rx ON VCC Tx ON VCC HIGH BAND IMAGE SET I GND HIGH BAND LO INPUT LOW BAND LO INPUT GND HIGH BAND IMAGE SET Q GND X2 ON N/C N/C STRONG SIGNAL GND VCC GND HIGH BAND LNA IN LOW BAND LNA IN GND LOW BAND LNA OUT GND GND N/C No Connection Transmit IF A Transmit IF B Ground Low Band Mixer Input Ground VCC Ground Transmit Signal A Transmit Signal B Ground No Connection High Band/Low Band Control LO Buffer Power Control High Band IF A High Band IF B Low Band IF A Low Band IF B Ground High Band LO Output High Band LO Output Low Band LO Output Low Band LO Output LNA/Mixer Power Control VCC Tx Mixer/Driver Power VCC High Band Image Set I Ground High Band LO Connection Low Band LO Connection Ground High Band Image Set Q Ground Freq. Doubler Power Control No Connection No Connection Strong Signal Detection Ground VCC Ground High Band LNA Input Low Band LNA Input Ground Low Band LNA Output Ground Ground No Connection DESCRIPTION
1999 Mar 02
3
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
MIX IN
Tx IF B
Tx IF A
GND
GND
V CC
GND
GND
Tx B
Tx A
N/C
HI/LO
N/C
N/C
SYN ON
GND
HIGH BAND IF A
GND
HIGH BAND IF B
LNA OUT
LOW BAND IF A
GND
LOW BAND IF B
GND
IMAGE REJECT MIXER
LOW BAND LNA IN
HIGH BAND LNA IN
HIGH BAND LO A X2 HIGH BAND LO B
GND
V CC
LOW BAND LO A
GND
LOW BAND LO B
STRONG SIGNAL
Rx ON
N/C
HIGH BAND IMAGE SET I
HIGH BAND IMAGE SET Q
GND
GND
HIGH BAND LO INPUT
LOW BAND LO INPUT
GND
X2 ON
VCC
Tx ON
V CC
N/C
SR01436
Figure 2.
Block Diagram
1999 Mar 02
4
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 1. POWER DOWN CONTROL
For Applications Not Using a Frequency Doubler, each state is defined as follows: DOUBLER Control State (Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2 ON) x000xx 010000 011000 011010 011100 010100 110000 111000 111010 110100 Sleep Low-Band LO Buffer on Low-Band Receive Normal Low-Band receive Strong Signal Low-Band Transmit (Analog only) N/A High-Band LO Buffer On High-Band Receive Normal High-Band Receive Strong Signal N/A Off Off Off Off Off Off Off Off Off Off LO BUFFER High Band Off Off Off Off Off Off On On On On Low Band Off On On On On On Off Off Off Off LNA High Band Off Off Off Off Off Off Off On Off Off Low Band Off Off On Off On
High Bias
MIXER High Band Off Off Off Off Off Off Off On On Off Low Band Off Off On On On Off Off Off Off Off
TX MIXER DRIVER High Band Off Off Off Off Off Off Off Off Off On Low Band Off Off Off Off On On Off Off Off Off
Off Off Off Off Off
For Applications Using a Frequency Doubler, each state is defined as follows: DOUBLER Control State (Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2 ON) x000xx 010000 011000 011010 011110 010100 010001 011001 011011 011111 111001 111011 110101 Sleep Transmit (Low and High Band) Low-Band Receive Normal Low-Band Receive Strong Signal Low-Band Transmit (Analog only) Low-Band Transmit (GSM) Transmit (Low and High Band) Low-Band Receive Normal Low-Band Receive Strong Signal Low-Band Transmit(Analog only) High-Band Receive Normal High-Band Receive Strong Signal High-Band Transmit (GSM) Off Off Off Off Off Off On On On On On On On LO BUFFER High Band Off Off Off Off Off Off Off Off Off Off On On On Low Band Off On On On On On On On On On On On On LNA High Band Off Off Off Off Off Off Off Off Off Off On Off Off Low Band Off Off On Off On
High Bias
MIXER High Band Off Off Off Off Off Off Off Off Off Off On On Off Low Band Off Off On On On Off Off On On On Off Off Off
TX MIXER DRIVER High Band Off Off Off Off Off Off Off Off Off Off Off Off On Low Band Off Off Off Off Off On Off Off Off Off Off Off Off
Off Off On Off On
High Bias
Off Off Off
NOTE: "0" is low logic state; "1" is high logic state.
1999 Mar 02
5
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
OPERATION
The low-band contains both an LNA and mixer that is designed to operate in the 800 to 1000 MHz frequency range. The high-band contains an LNA and image-rejection mixer that is designed to operate in the 1800 to 2000 MHz frequency range with over 30 dB of rejection over an intermediate frequency (IF) range from 100 to 125 MHz. Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in the I and Q IF channels that phase shift the IF by 45_ and 135_, respectively. The two phase shifted IFs are recombined and buffered to produce the IF output signal. The LO section consists of an internal all-pass type phase shifter to provider quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. The transmit mixer section consists of a low-noise amplifier, and a down-convert mixer. In the transmit mode, an internal LO buffer is used to drive the transmit IF down-convert mixer.
Control Logic Section
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, X2 (doubler) On, control the logic functions. The HI/LO mode selects between low-band and high-band operation. The SYN ON mode enables the LO buffers independent of the other circuitry. When SYN ON is high, all internal buffers in the LO path of the circuit are turned on, thus minimizing LO pulling when the remainder of the receive or transmit chain is powered-up. The Rx ON mode enables the LO buffers when the device is in the low-band receive normal, receive strong signal and transmit modes; the Rx ON mode enables the LO buffers, also, when the device is in the high-band receive normal, and receive strong signal modes. The Tx ON mode enables the transmit mixer. The strong signal mode, when disabled, allows the low- and high-band LNAs to function normally; and when the strong signal mode is enabled, it turns-off the low- and high-band LNAs. This is needed when the input signal is large and needs to be attenuated. The doubler (X2) on mode enables the doubler. When the doubler is on, the input signal from the LO buffers is doubled in frequency. The signal can be used to drive the image-rejection mixer and the output LO high-band ports. When the doubler mode is on, all other control logic (see table 1) functions the same.
Low-Band Receive Section
The circuit contains a LNA followed by a wide-band mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and an AC coupled capacitor to the matching network.
Local Oscillator (LO) Section
The LO input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. A synthesizer-on (SYN ON) mode is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive or transmit mode.
Low-Band Receive Section (Analog Transmit Mode)
The bias current of the low-band LNA will increase during analog transmission, which increases its gain compression point and makes the receiver less sensitive to PA leakage power for an AMPS application.
Transmit Mixer Section
The transmit mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is down-converted to a modulated transmit IF frequency, and phase-locked with the baseband modulation. The IF outputs are HIGH impedance (open-collector type). A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and AC coupled capacitors to the matching network.
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range mixers. These are Gilbert cell mixers; the internal architecture is fully differential. The LO is shifted in phase by 45_ and 135_ and mixes the amplified RF signal to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45_ and 135_, respectively, amplified and recombined internally to realize the image rejection. The IF output is differential and of the open-collector type. A typical application will load the output buffer with an inductor across the IF outputs, a pull-up inductor to VCC and an AC coupled capacitor to the matching network.
1999 Mar 02
6
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
ABSOLUTE MAXIMUM RATINGS
QUANTITY Input supply voltage at pins: 7, 25, 27, 40 Power dissipation Input power at all ports Operating temperature range (pin temp) Storage temperature range SYMBOL VCC PD PIN TO Tsrg VALUE 4.75 150 +20 -40 to+85 -65 to +125 UNIT V mW dBm C C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.75 V, TA = -40 to +85C unless otherwise noted QUANTITY DC Supply voltage Current Consumption: Sleep Mode Low Band Receive Normal Low Band Receive Strong Low Band Transmit (Analog) Low Band Transmit (GSM) High Band Receive Normal High Band Receive Strong High Band Transmit (GSM) Frequency Doubler Logic Low Input Logic High Input 0 1.9 X000XX 011000 011010 011110 010100 111000 111010 110100 CONDITION SYMBOL VCC ICC ICC ICC ICC ICC ICC ICC ICC 35.0 10.1 MIN. 3.6 TYP. 3.75 1 12.5 8.8 18.0 16.0 42.0 38.0 21.5 8.8 0.5 4.0 53.0 MAX. 3.9 100 15.2 UNIT V mA mA mA mA mA mA mA mA mA V V
1999 Mar 02
7
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
AC ELECTRICAL CHARACTERISTICS Low-Band, Dual Mode of Operation
VCC = +3.75 V, FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = -3 dBm, TA = +25_C; unless otherwise stated Min TYP PARAMETERS -3s +3s System RF Input Frequency Range IF Frequency LO Frequency Cascaded Power Gain; includes 3dB filter loss Power Gain Reduction (Strong Signal Mode--LNA Off) Cascaded Noise Figure; includes 3dB filter loss LNA LNA Gain LNA IIP3 LNA Noise Figure Mixer Mixer Gain Mixer IIP3 Mixer Noise Figure Other Input Impedance, RF Port Return Loss at LNA Inputs and Output Return Loss at Mixer Input and Outputs LO leakage at RF Port LO Input Power Turn ON/OFF Time -5 -42 -3 100 -1 50 -10 -10 W dB dB dBm dBm msec 1 1 9 4 9 9.5 5 10 10 6 11 dB dBm dB 17 -6 1.6 17.5 -5 1.7 18 -4 1.8 dB dBm dB 22.5 29 869 881 110.52 991.52 24 35 2.6 25.5 41 960 MHz MHz MHz dB dB dB Max UNITS NOTES
Low-Band LO Buffer
PARAMETERS LO Frequency Differential Output Power Differential Output Impedance Harmonic Content Input Power Input Impedance Turn On/Off Time -5 Min -3s TYP. 991.52 -7 100 -20 -3 50 30 -1 +3s Max UNITS MHz dBm W dBc dBm W msec 1 NOTES
1999 Mar 02
8
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
AC ELECTRICAL CHARACTERISTICS High-Band, Single Mode of Operation LNA and Image Reject Mixer
VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = -3 dBm, TA = +25_C; unless otherwise stated PARAMETERS RF Input Frequency Range IF Frequency LO Frequency Power Gain Power Gain Reduction (Strong Signal Mode--LNA Off) Noise Figure Input Impedance, RF Port Return Loss at Inputs LO leakage at RF Port 1 dB RF Input Compression Point IP3 Order Intermodulation Product) Referred to the RF Input Port (2 x LO) - (2 x RF) Spur Performance -50 dBm IN Referred to RF Input Port 50 In ut Measure at LO = 2040 MHz and RF = 1985 MHz (3 x LO) - (3 x RF) Spur Performance. -50 dBm IN Referred to RF Input Port. Measure at LO = 2040 MHz and RF = 2003 MHz. Image rejection, fRX+2fIF or fRX -2fIF Referred to the RF Input Port LO Input Power Turn ON/OFF Time 30 -5 (3RD -15 -48 -24 -12.5 -65 -10 MIN 1805 100 1905 21 40 4.0 23.5 47 4.2 50 -10 4.4 110.52 -3s TYP. +3s MAX 1990 125 2115 25 54 UNITS MHz MHz MHz dB dB dB W dB dBm dBm dBm dBc 1 NOTES
-62.5
dBc
35 -3 30 -1
dB dBm msec
High-Band LO Buffer
PARAMETERS LO Frequency Range Differential Output Power Differential Output Impedance Harmonic Content Input Power Input Impedance Turn On/Off Time -5 -3 50 30 MIN 1905 -9 100 -20 -1 -3s TYP. +3s MAX 2115 UNITS MHz dBm W dBc dBm W msec 1 NOTES
1999 Mar 02
9
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Frequency Doubler
PARAMETERS Output Frequency Range Output Power Differential Output Impedance Harmonic Content (3F, 4F, etc.) Subharmonic Content (Fi) Non-Harmonic Content Turn On/Off Time Phase Noise Degradation, f = 30kHz MIN 1905 -9 100 -20 -20 80 30 6 -3s TYP. +3s MAX 2115 UNITS MHz dBm W dBc dBc dBc msec dB NOTES
Transmit Mixer
PARAMETERS TX Mixer Input Frequency TX RF Input Impedance, Balanced TX Mixer Output Frequency TX IF Load Impedance Maximum TX IF Load Capacitance Conversion Power Gain 1 dB Input Compression Point IIP2 IIP3 Noise Figure (double sideband) Reverse Isolation TXIN-LOIN Isolation LOIN-TXIN NOTES: 1. External matching network is required. 2. From 200W input to a 1kW output. 40 40 -9 15 16 -17 20 -7 7.5 -5 17 70 1000 2 MIN 824 200 200 -3s TYP. +3s MAX 1910 UNITS MHz W MHz W pF dB dBm dBm dBm dB dB dB 2 NOTES
1999 Mar 02
10
R28 AP43 J1-3
A
J1-4 C8 3.3 pf L12 DPS1 C37 100 pf C38 1000 pf 4.7 nH R27 RxMxGND DUT-4 GND GND J29-2 L1 330 nH DUT-6 GND 3.92K R31 AP16 A B Maleltxsma 4763-000-00 I1696 AP16 A PAT-3 R19 51.1 J26-3 P6 1 AT8 3 L8 8.2 nH B DUT-9 TXA L5 VCC DUT-10 TXB GND STRONG N/C N/C DUT-36 DP23 DUT-37 DUT-38 DUT-39 DP31 J28-2 C2 1.5 pf 33 pf C17 100 pf C14 1000 pf DUT-40 DPS1 B 1 uH A C33 0.1 uf 3.92K C19 C18 33 pf B Maleltxsma 4763-000-00 I1693 P8 C1 1000 pf C22 DUT-5 LBMIN C30 1.5 pf 33 pf L9 8.2 nH B DUT-7 VCC R30 DUT-8 GND C21 HBLIN C29 2.2 pf 33 pf A DUT-42 GND N/C DUT-11 DUT-12 R3 3.92K C10 1000 pf C15 100 pf R22 51.1 PAT-3 A LBLIN DUT-43 1 AT7 3 3.92K J28-3 GND DUT-41
B
AP45 DUT-1 N/C N/C DUT-48 L2 330 nH coil DUT-3 TXIFB DUT-46 DUT-47 DUT-44 R29 AP47 332 GND 10 pf
A
R1 3.92K C23 8.2 pf C24
B
3.92K DUT-2 TXIFA LBLOUT DUT-45
1999 Mar 02
SA1920
R2 562 L3
A 1 uH B
P1
Philips Semiconductors
1 A3 AT9 B PAT-10 R32 Maleltxsma 1 4763-000-00 I1688
C9 5.6 pf
DPS1
C31 0.1 uf
J2-4
AP9 R13
Dual-band RF front-end
1K
J2-5
AP10
P2
Figure 3.
DUT-13 HILO SYNON HBIFA X2ON GND DUT-34 DUT-35 DUT-14 C5 DUT-15 R10 1
A B
A B
1
AT10
3
J6-5
AP42
PAT-3 R17 51.1 I1689 4763-000-00 Maleltxsma R4
J13-2
DP33
3.92K
J13-3
DP34
SA1920 Dual-Band Test Circuit
11
8.2 pf IMAGE REJECT MIXER DUT-16 C27 5.6 pf LBBPS HBIFB DUT-33
A
P3 C3 5.6 pf L6 330 nH
A
1
3
B
AT1 PAT-10 R9 1.21K L10 330 nH C4 1000 pf
B
J25-2
MaleLTXAC_SMA 4763-000-00 I1929
DPS1
AP14 R16 1
J26-2
J11-2 C6 DUT-17 LBIFA R18 1
A
AP46
R26
3.92K GND
A
P5 5.6 pf L7 330 nH DUT-18 LBIFB C28 4.7 pf C7 8.2 pf
DUT-32
A
1
B
AT2
3
R15 3.92K C26 LBTNK DUT-31 10 pf R21 51.1 C25 HBTNK DUT-30 10 pf R20 51.1
AP36
J24-4
PAT-10 R11 4.32K
B B
Maleltxsma 4763-000-00 I1692 L11 330 nH C11 1000 pf
1 AT5 3 PAT-3
A
P7 B LRPS-2-11 1 AT6 3 PAT-3 Maletxsma 4763-000-00 I1695
DPS1
U1 3 PORT 2 6 SUM PORT 4 PORT 1
J12-4 3 AT3 1 PAT-10 R24 1 DUT-19 DUT-20 C34 33 pf DUT-21 C36 33 pf DUT-22 C35 33 pf DUT-23 DUT-24 LBLOA HBLOB HBLOA GND
AP44
R25
3.92K
P4 3 AT4 1 PAT-10 R23 1
A
6
B
U2 4 PORT 1 SUM PORT PORT 2 3
GND 2X HBBPS
DUT-29
R14 3.92K DUT-28 R12 1 L4 VCC DUT-27 C16 100 pf TXON DUT-26 C12 1000 pf B 1 uH A C32 0.1 uf
AP39
Maletxsma 4763-000-00 I1691
LRPS-2-11
J22-5 AP11 DPS1LF DPS1LS DPS1HF DPS1HS DP19
J11-5 C20 33 pf
AP41
R8
J21-2 J100-2 J100-3 J100-4 J100-5 J23-4
J15-3
AP40
3.92K R7
J20-3
AP38
3.92K R6
J21-3
AP12
3.92K R5
LBLOB RXON VCC DUT-25 C13 1000 pf
SA1920
Product specification
SR01801
J16-2
DP26
3.92K
1 DO NOT ASSEMBLE
J15 SMA LBLOUT C20 33 pF C19 1 pF L5 6.8 nH C18 33 pF C24 47 pF C27 100 nF J6 STRONG N/C N/C VCC GND GND GND GND GND LBLIN HBLIN LBLOUT STRONG C32 10 nF U1 SA1920 (JEANNE) 48 47 46 45 44 43 42 41 40 39 38 37 C34 10 nF
1999 Mar 02
J17 SMA LBLIN J16 SMA HBLIN C35 1.5 pF R3 620 L9 8.2 nH C1 L1 180 nH TXIFA C21 TXIFB 3 3.9 pF 2 35 X2ON N/C N/C 1 36 10 pF
NOTE: LOGIC PIN MARKED X2 ON APPLICATION DEMO BOARD SHOULD BE SET TO 0 (GND) FOR CORRECT OPERATION
Philips Semiconductors
Dual-band RF front-end
C2
8.2 pF
Figure 4.
34 33 R1 L2 180 nH LBMIN 5 2K MGND1 4 32 C3 GND 6 6.8 pF 31 30
J18 SMA
J5 X2ON GND QSET R4 2.2 K GND J19 SMA LBLOIN LBLOIN C15 10 pF HBLOIN C14 J20 10 pF SMA HBLOIN 29 28 GND ISET C31 UL
TXOUT
C17 100 nF
J1 SMA LBMIN
L6
8.2 nH
SA1920 Dual-Band Application Circuit
12
V CC 7 IMAGE REJECT MIXER GND 8 9 C4 33 pF TXA C5 33 pF TXB 10 C23 5 pF N/C 12 5 pF 1.5 pF GND 11 13 14 15 16 17 18 19 20 GND HILO LBIFA LBIFB HBIFA HBIFB HBLOA SYNON L7 220 nH L3 220 nH C28 6.8 pF C29 6.8 pF R2 2K C30 3.9 pF L8 150 nH C13 UL C12 3.3 pF L4 270 nH C11 UL C10 UL C34 33 pF HBMOUT LBMOUT
C22
47 pF
C25
100 nF
J2 SMA TXIN
27 26
VCC TXON J4 TXON 25 VCC
J11 HILO
C16 21 HBLOB 22 LBLOA 23 LBLOB 24 C26 RXON
47 pF
100 nF
J12 SYNON
C6
33 pF L10 UL C7 33 pF L11 UL C8 33 pF
J3 RXON J9 SMA LBLOB J7 SMA LBLOA J8 SMA HBLOB C9 33 pF J10 SMA HBLOA
SR01813
VCC
Product specification
SA1920
GND
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
PERFORMANCE CHARACTERISTICS
VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = -5 dBm, TA = +25_C; unless otherwise stated
16.0 15.0 14.0 ICC (mA) 13.0 +25C 12.0 11.0 10.0 30.0 9.0 8.0 3.60 25.0 3.60 -40C ICC (mA) 35.0 45.0 +85C 40.0 +25C -40C 50.0 +85C
3.65
3.70
3.75 VCC (V)
3.80
3.85
3.90
3.65
3.70
3.75 VCC (V)
3.80
3.85
3.90
SR01613
SR01614
Figure 5.
Low Band Receive Normal ICC
Figure 6.
High Band Receive Normal ICC
30 28 26 24 22 GAIN (dB) 20 18 16 14 12 10 100 105 110 115 120 125 IF FREQUENCY (MHz)
45 REJECTION (dB) 40 35 30 25 20 100 105 110 115 120 125 IF FREQUENCY (MHz)
SR01610
SR01609
Figure 7.
High Band Gain vs. IF Frequency
Figure 8.
High Band Image Rejection vs. IF Frequency
-10 -11 -12 -13 -14 -15 100
20 18 16 14 12 10 105 110 115 120 125 100 105 110 115 120 125 IF FREQUENCY (MHz) IF FREQUENCY (MHz)
IP3 (dBm)
IP2 (dBm)
SR01631
SR01611
Figure 9.
High Band IP3 vs. IF Frequency
Figure 10.
High Band IP2 vs. IF Frequency
1999 Mar 02
13
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
6.0 NOISE FIGURE (dBm) 5.0 4.0 3.0 2.0 GAIN (dB)
20 19 -40C 18 17 16 +25C +85C
1.0 0.0 100 15 105 110 115 120 125 14 860
IF FREQUENCY (MHz)
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
SR01612
SR01615
Figure 11.
High Band NF vs. IF Frequency
Figure 12.
LB LNA Gain vs. Frequency
-2 -3 -4 -5 IP3 (dBm) -7 -8 -9 -10 -11 -12 860 870 880 890 900 910 920 930 940 950 960 -6 +25C -40C +85C NOISE FIGURE (dB)
2.6 2.4 2.2 2 1.8 1.6 1.4 -40C 1.2 1 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz) FREQUNCY (MHz) +25C +85C
SR01616
SR01617
Figure 13.
LB LNA IP3 vs. Frequency
Figure 14.
LB LNA Noise Figure vs. Frequency
12 10 GAIN (dB) 8 +85C 6 4 2 0 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz) -40C +25C
8 7 6 IP3 5 (dBm) 4 3 2 1 0 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz) -40C +25C
+85C
SR01618
SR01619
Figure 15.
LB Mixer Gain vs. Frequency
Figure 16.
LB Mixer IP3 vs. Frequency
1999 Mar 02
14
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
15 14 NOISE FIGURE (dB) 13 12 11 10 9 8 7 6 5 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY (MHz) +25C -40C +85C
32 30 28 GAIN 26 (dB) 24 22 20 18 1800 1820 -40C +25C +85C
1840
1860
1880
1900
1920
1940
1960
1980 2000
FREQUENCY (MHz)
SR01620
SR01621
Figure 17.
LB Mixer Noise Figure vs. Frequency
Figure 18.
HB Gain vs. Frequency
-6 -8 -10 IP3 (dBm) -12 -14 -16 -18 -20 1800 +25C -40C NOISE FIGURE (dB) +85C
7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 2 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 +25C -40C +85C
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01622
SR01623
Figure 19.
HB IP3 vs. Frequency
Figure 20.
HB Noise Figure vs. Frequency
45 IMAGE REJECTION (dB) 40 +25C 35 30 25 20 1800 -40C +85C
20 18 16 14 12 IP2 10 (dBm) 8 6 4 2 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 0 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 +25C -40C +85C +85C +25C
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01624
SR01625
Figure 21.
HB Image Rejection vs. Frequency
Figure 22.
HB IP2 vs. Frequency
1999 Mar 02
15
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
-15 +85C +25C 1 dB COMP (dBm) 1 dB COMP (dBm) -17 -19 -40C -21 -23 -25 860
-10 -11 -12 -13 -14 -15 -16 -17 -18 -19 -20 860 870 880 890
+85C +25C -40C
900
910
920
930
940
950
960
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01628
SR01629
Figure 23.
LB LNA 1 dB Compression vs. Frequency
Figure 24.
LB Mixer 1 dB Compression vs. Frequency
-20 -21 -22 1 dB COMP (dBm) -23 -24 -25 -26 -27 -28 -29 -30 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 +85C +25C -40C
FREQUENCY (MHz)
SR01630
Figure 25.
HB 1 dB Compression vs. Frequency
1999 Mar 02
16
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
S-PARAMETERS
1:
56.906 -165.14 200MHz 32.531 -80.145 400MHz 27.213 -50.76 600MHz 22.594 -28.63 6.1759pF 900.125MHz
2:
3:
4:
4 1 3 2
START: 100MHz STOP: 1.35GHz
SR01632
Figure 26.
Typical S11 of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode
1:
9.2256U 170.16 200MHz 8.1698U 142.74 400MHz 6.7943U 124.27 600MHz 5.2793U 106.87 900MHz
2: 4 3 2 4: 3:
1
START: 100MHz STOP: 1.35GHz
SR01643
Figure 27.
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
17
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
2:
7.0159mU 75.611 400MHz 7.8297mU 90.185 600MHz 14.215mU 120.84 900MHz
3:
4:
3 4 2
START: 100MHz STOP: 1.35GHz
SR01644
Figure 28.
Typical S12 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1:
35.5 294.66 200MHz 351.72 -537.09 400MHz 77.625 -220.38 600MHz 30.91 -120.37 1.4692pF 900MHz
2:
3:
4: 1
2
4
3
START: 100MHz STOP: 1.35GHz
SR01633
Figure 29.
Typical S22 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
18
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
133.16 -326.61 200MHz 74.875 -193.17 400MHz 46.625 -135.03 600MHz 25.117 -83.656 2.1107pF 901.375MHz
2:
3:
4:
1 2 4 3
START: 100MHz STOP: 1.35GHz
SR01634
Figure 30.
Typical S11 of Low Band LNA @ 3.75V for Receive Strong Signal Mode
1:
82.778mU 56.472 200MHz 101.74mU 30.696 400MHz 106.02mU 18.799 600MHz 97.527mU 992.89m 901.375MHz
2:
3:
4: 1 2 4 3
START: 100MHz STOP: 1.35GHz
SR01645
Figure 31.
Typical S21 of the Low Band LNA @ 3.75V for Receive Strong Signal Mode
1999 Mar 02
19
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
82.482mU 48.834 200MHz 101.97mU 15.44 400MHz 105.45mU -4.4673 600MHz 101.04mU -32.816 901.375MHz
2:
3:
4: 1 2 3
4
START: 100MHz STOP: 1.35GHz
SR01646
Figure 32.
Typical S12 for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode
1:
65.453 303.47 200MHz 381.59 -432.3 400MHz 74.375 -206.25 600MHz 28.723 -108.71 1.6267pF 900MHz
2:
3:
4: 1
2
3 4
START: 100MHz STOP: 1.35GHz
SR01635
Figure 33.
Typical S22 for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode
1999 Mar 02
20
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
102.26 -217.14 200MHz 24.902 -100.07 400MHz 20.596 -48.596 600MHz 20.036 -18.022 9.8121pF 900MHz
2:
3:
4:
4 1
3
2
START: 100MHz STOP: 1.35GHz
SR01636
Figure 34.
Typical S11 for the Low Band Mixer @ 3.75V for the Receive Normal Mode
1:
15.326 -41.15 200MHz 12.527 -7.6484 400MHz 19.854 11.1 600MHz 27.865 -9.7334 18.166pF 900.125MHz
2:
3:
4: 3
4
2
1
START: 100MHz STOP: 1.35GHz
SR01637
Figure 35.
Typical S11 for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode
1999 Mar 02
21
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
70.324 -120.49 200MHz 45.121 -61.621 400MHz 39.195 -39.092 600MHz 33.025 -24.061 7.3497pF 900MHz
2:
3:
4:
4
3 2
1
START: 100MHz STOP: 1.35GHz
SR01638
Figure 36.
Typical S11 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
16.617U 161.94 200MHz 12.974U 134.43 400MHz 10.255U 118.75 600MHz 7.3947U 101.63 900MHz
2:
3: 4 2 3 4: 1
START: 100MHz STOP: 1.35GHz
SR01647
Figure 37.
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1999 Mar 02
22
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
4.6161mU 97.782 200MHz 6.5206mU 88.02 400MHz 9.1807mU 105.05 600MHz 15.58mU 119.06 900MHz
2:
3: 4 4:
3 1
2
START: 100MHz STOP: 1.35GHz
SR01648
Figure 38.
Typical S12 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
67.703 295.39 200MHz 436.03 -336.16 400MHz 105.43 -216.6 600MHz 37.477 -123.19 1.4355pF 900MHz
2:
3:
4: 1
2
4
3
START: 100MHz STOP: 1.35GHz
SR01639
Figure 39.
Typical S22 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1999 Mar 02
23
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
13.76 -15.057 1.55GHz 10.422 -5.5498 1.85GHz 11.58 -3.0508 1.95GHz 12.092 -616.21m 125.99pF 2.05GHz
2:
3:
4:
4
3 2
1
START: 1.40GHz STOP: 2.65GHz
SR01640
Figure 40.
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Normal Mode
1:
12.135 -53.891 1.55GHz 9.3379 -38.457 1.85GHz 8.75 -34.238 1.95GHz 8.7695 -31.25 2.4844pF 2.05GHz
2:
3:
4:
4
3 START: 1.40GHz STOP: 2.65GHz
2
1
SR01641
Figure 41.
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode
1999 Mar 02
24
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
20.574 -38.402 1.55GHz 18.104 -22.765 1.85GHz 24.446 -21.71 1.95GHz 20.975 -20.711 3.7486pF 2.05GHz
2:
3:
4:
4
3 2 1
START: 1.40GHz STOP: 2.65GHz
SR01642
Figure 42.
Typical S11 of the High Band LO @ 3.75V for the High Band Receive Normal Mode
1999 Mar 02
25
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 2. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.89 0.87 0.85 0.82 0.79 0.75 0.73 0.70 0.67 0.63 0.61 0.59 0.57 0.55 0.54 0.53 0.52 0.51 0.51 0.51 0.50 0.51 0.51 0.51 0.51 0.52 1999 Mar 02
26
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 3. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Strong Signal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.94 0.92 0.90 0.88 0.87 0.85 0.85 0.84 0.83 0.82 0.81 0.80 0.80 0.79 0.78 0.78 0.77 0.77 0.76 0.76 0.76 0.76 0.76 0.76 0.76 0.75 1999 Mar 02
27
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 4. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Transmit On (Analog) Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.80 0.76 0.72 0.67 0.62 0.57 0.55 0.51 0.47 0.44 0.42 0.40 0.38 0.37 0.36 0.35 0.34 0.34 0.34 0.34 0.34 0.35 0.35 0.36 0.36 0.37 1999 Mar 02
28
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 5. Typical S-Parameters of Low Band Mixer Input at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.85 0.84 0.85 0.85 0.85 0.85 0.85 0.80 0.75 0.70 0.67 0.57 0.53 0.51 0.49 0.48 0.49 0.47 0.47 0.47 0.47 0.48 0.48 0.49 0.50 0.51 1999 Mar 02
29
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 6. Typical S-Parameters of Low Band LO Input at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 |S11| (U) 0.76 0.73 0.70 0.68 0.66 0.64 0.61 0.59 0.55 0.51 0.46 0.38 0.29 0.18 0.10 0.18 0.31 0.42 0.50 0.57 0.61 0.64 0.66 0.68 0.68 0.65 1999 Mar 02
30
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 7. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Receive Normal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.58 0.59 0.59 0.60 0.62 0.63 0.65 0.66 0.66 0.66 0.65 0.63 0.64 0.61 0.60 0.59 0.58 0.58 0.57 0.57 0.57 0.56 0.57 0.57 0.56 0.56 1999 Mar 02
31
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 8. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Strong Signal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.81 0.81 0.81 0.80 0.80 0.80 0.79 0.79 0.79 0.79 0.79 0.79 0.77 0.78 0.79 0.79 0.80 0.79 0.80 0.79 0.79 0.79 0.79 0.79 0.79 0.79 1999 Mar 02
32
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 9. Typical S-Parameters of HB LO Input at VCC = +3.75V, HB Receive Normal Mode
FREQ (MHz) 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 |S11| (U) 0.62 0.61 0.60 0.60 0.59 0.59 0.58 0.57 0.57 0.55 0.48 0.43 0.47 0.48 0.50 0.50 0.50 0.50 0.50 0.49 0.49 0.48 0.47 0.46 0.45 0.43 1999 Mar 02
33
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
1999 Mar 02
34
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
NOTES
1999 Mar 02
35
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1999 All rights reserved. Printed in U.S.A. Date of release: 03-99 Document order number: 9397 750 05354
Philips Semiconductors
1999 Mar 02 36

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